 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FIO 50-12BD Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V 1 2 1 4 5 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900V; VGE = 15 V; RG = 39 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 50 32 50 VCES 10 200 V V A A A s W Features * NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current * ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications switches to control bidirectional current flow by a single control signal: * matrix converters * spare matrix converters * AC controllers Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.4 200 85 50 440 50 4.6 2.2 2 150 1.2 2.6 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJS IC = 30 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15 V; RG = 39 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 35 A (c) 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 340 FIO 50-12BD Diodes Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 48 25 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM t rr RthJC RthJS Component Symbol TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight Conditions IF = 30 A; TVJ = 25C TVJ = 125C Characteristic Values min. typ. max. 2.4 1.8 27 150 2.8 V V A ns 1.3 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 45 m Diode (typ. at TJ = 125C) V0 = 1.26V; R0 = 15 m Thermal Response (per diode) 1.6 Conditions Maximum Ratings -55...+150 -55...+125 C C V~ N IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W Diode Cth1 = 0.039 J/K; Rth1 = 0.337 K/W Cth2 = 0.090 J/K; Rth2 = 0.963 K/W IISOL 1 mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 2500 20...120 Characteristic Values min. typ. max. 40 pF mm mm 9 g Dimensions in mm (1 mm = 0.0394") (c) 2003 IXYS All rights reserved 2-4 340 FIO 50-12BD 120 A 120 A 100 IC 80 60 11 V 11 V 13 V VGE = 17 V 15 V 13 V VGE = 17 V 15 V 100 IC 80 60 40 20 0 0 1 2 3 4 VCE 40 9V TVJ = 25C 20 0 9V TVJ = 125C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A VCE = 20 V 100 IC IF 90 A 75 60 45 TVJ = 125C TVJ = 25C 80 60 40 TVJ = 125C 30 15 TVJ = 25C 20 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V 10 K/W ZthJC 1 IGBT diode 15 VGE 0.1 10 0.01 5 VCE = 600 V IC = 35 A single pulse 0.001 0.0001 0.001 MUBW3512E7 0 0 40 80 120 160nC QG 200 0.01 0.1 t 1 s 10 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. transient thermal impedance 340 (c) 2003 IXYS All rights reserved 3-4 FIO 50-12BD 20 mJ td(on) 100 ns 90 80 70 t Eoff 60 50 40 VCE = 600 V VGE = 15 V RG = 39 TVJ = 125C 6 mJ VCE = 600 V VGE = 15 V RG = 39 TVJ = 125C Eoff 1200 ns 1000 800 t 600 16 Eon 4 12 8 4 0 0 20 tr Eon 30 20 10 0 2 td(off) 400 200 0 0 20 40 IC 60 A tf 40 IC 60 A 80 0 80 Fig. 7 Typ. turn on energy and switching times versus collector current 160 Fig. 8 Typ. turn off energy and switching times versus collector current 800 ns 600 t 8 mJ Eon 6 VCE = 600 V VGE = 15 V IC = 35 A TVJ = 125C 4 mJ t Eoff Eon ns 120 td(on) 3 VCE = 600 V VGE = 15 V IC = 35 A TVJ = 125C Eoff 80 4 tr 2 td(off) 400 2 40 1 tf 200 0 10 20 30 40 50 60 RG 70 80 0 0 10 20 30 40 50 RG 60 70 80 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor (c) 2003 IXYS All rights reserved 4-4 340 |
Price & Availability of FIO50-12BD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |